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Principle of magnetron sputtering

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High power impulse magnetron sputtering (HIPIMS) is a relatively young physical vapor deposition (PVD) technology that combines magnetron sputtering with pulsed power technology ... i.e. using Faraday’s principle of inductive generation of high voltage pulses via repetitive current interruption. Therefore, all original experiments of. High Power Impulse Magnetron Sputtering or HIPIMS is a relatively recent advance in sputtering technology used for the physical vapor deposition of thin film coatings based upon Magnetron Sputtering with a high. Power Impulse Magnetron Sputtering and Verification by Non-Sputtering Discharge Zhong-Zhen Wu, , Shu Xiao et al.-An ionization region model for high-power impulse magnetron sputtering discharges M A Raadu, I Axnäs, J T Gudmundsson et al.-Modeling of high power impulse magnetron sputtering discharges with graphite target.

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The principle of the amorphous oxide is basically the same as that of the crystalline state, Magnetron sputtering technology can prepare super-hard films, corrosion-resistant friction films, superconducting films, magnetic films, optical films, and various films with special functions. It is widely used in the field of industrial film preparation. The magnetron is a magnetically assisted discharge. As in the DC and RF sputtering arrangements there is a perpendicular (to the target surface) electric field. But in the Magnetron configuration a permanent magnet (or electromagnet) is added, to create lines of magnetic flux that are parallel to the surface of the target. Sputtering is a plasma based deposition process in which energetic ions are accelerated towards a target. The ions strike the target and atoms are ejected (or sputtered) from the surface. These atoms travel towards the substrate and incorporate into the growing film. Magnetron sputtering is a deposition technology involving a gaseous plasma .... The principle of the formation of TiN 2 films by magnetron sputtering is briefly described. The stoichiometry x = N/Ti of the TiN x films was controlled by deposition parameters, and its maximum value of x = 2.3 was achieved. For the first time, a possibility to form the TiN 2 dinitride films by magnetron sputtering has been demonstrated. The. General Principle of Operation The above illustration describes a generic manifestation of a magnetron sputtering source. DC, pulsed DC, AC and RF power supplies may be used, depending upon target material, if reactive sputtering is desired and other factors. A permanent magnet structure is located behind a target serving as a deposition source. erating principles and. The scia Magna 200 is used for precision wafer coatings by deposition of metals and/or dielectric layers. With its selectable sputter modes and arrangements the system can be configured according the customer requirements. In addition, the system is suitable for small scale R&D applications as well as for mass production, in cluster layout with. Jul 05, 2022 · The magnetron sputtering coating technology of pvd coating machine has been widely used in all walks of life and is favored by many coating manufacturers, but most of them have a very shallow understanding of the coating principle of magnetron sputtering pvd coating machine. Sort out some introductions about the coating principles of magnetron .... ATOP Spoon/Knife/Fork Magnetron Sputtering Vacuum Coating Machine For Tableware Working principle Magnetron sputtering working principle of vacuum coating machine, the so-called "splash", under the action of ... Read More. 2022-07-21 11:32:13. Stable Operation Vacuum Thin Film Deposition Equipment For Decoration Film.

The basic principle of magnetron sputtering is related to the orthogonal electromagnetic field between the substrate and the cathode sputtering target. By passing into the special gas, the glow discharge on the target surface through the orthogonal electromagnetic fieldforms a. General Principle of Operation The above illustration describes a generic manifestation of a magnetron sputtering source. DC, pulsed DC, AC and RF power supplies may be used, depending upon target material, if reactive sputtering is desired and other factors. A permanent magnet structure is located behind a target serving as a deposition source. When sputtering Aluminum and Copper alloys, the film on the wafer has more copper than the target. Reason: At the target, the argon has achieved high enough energy to sputter the Al and Cu evenly. However, in the gas (lower electric field), the heavier atoms are less effected by light sputter gas. The light Al can gain enough energy to be.

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Magnetron sputtering enabled sustainable synthesis of nanomaterials for energy electrocatalysis Jie Liang , a Qian Liu , a Tingshuai Li , a Yonglan Luo , a Siyu Lu , b Xifeng Shi , c Fang Zhang , d Abdullah M. Asiri e and Xuping Sun * a. Principle of DC Magnetron Sputtering Power Supply-BOVCEED-The DC magnetron sputtering power supply is a kind of physical vapor deposition. Metals, semiconductors, insulators and other materials are usually manufactured by general sputtering methods, which are characterized by relatively simple equipment, not difficult to control, large plating area, and strong adhesion. Magnetron sputtering technology. Technical illustration. Client: RUSNANO. Date: 15.09.2008. RUSNANO collaborates with Italian company Galileo Vacuum Systems s.p.a. to produce metallized packaging materials and equipment for handling the metal coating of rolled materials. The project is based on an innovative nanotechnology for selective .... A magnetron is basically a vacuum tube of high power having multiple cavities. It is also known as cavity magnetron because of the presence of anode in the resonant cavity of the tube. The operating principle of a magnetron is such that when electrons interact with electric and magnetic field in the cavity then high power oscillations get. DC Sputtering. Magnetron sputtering using DC power is an effective and economical choice for depositing conductive materials such as metals or transparent conductive oxides (TCOs). For magnetic materials such as Fe (iron), Ni (nickel), or Co (cobalt), DC magnetrons can be configured with magnets specifically selected for generating plasma. The scia Magna 200 is used for precision wafer coatings by deposition of metals and/or dielectric layers. With its selectable sputter modes and arrangements the system can be configured according the customer requirements. In addition, the system is suitable for small scale R&D applications as well as for mass production, in cluster layout with. ego 2156 review. Magnetron sputtering principle: an orthogonal magnetic field and an electric field are applied between the sputtered target (cathode) and the anode, and the required inert gas (usually Ar gas) is charged in the high vacuum chamber, and the permanent magnet is at the target.The surface of the material forms a magnetic field of 250 to 350 Gauss.

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Magnetron sputtering deposition uses a closed magnetic field to trap electrons, enhancing both the efficiency of the initial ionization process and allowing a plasma to be generated at lower pressures which reduces both background gas incorporation in the growing film and energy loses in the sputtered atom through gas collisions. This technique .... Magnetron sputtering is a dominant technique to grow thin films because a large quantity of thin films can be prepared at relatively high purity and low cost. This involves ejecting material from a "target" that is a source onto a "substrate" such as a silicon wafer, as shown in Figure 1.. Magnetron sputtering is a deposition technology defined as "cathodic sputtering of target material in magnetron discharge plasma (crossed field discharge)", and is shown in Figure 30. Magnetron. Principle Of Magnetron Sputtering - Mar 03, 2021 - An orthogonal magnetic field and electric field are added between the sputtered target (cathode) and the anode, and the required inert gas (usually Ar gas) is filled in the high vacuum chamber. The permanent magnet forms 250-350 on the surface of the target material. Principle of DC Magnetron Sputtering Power Supply-BOVCEED-The DC magnetron sputtering power supply is a kind of physical vapor deposition. Metals, semiconductors, insulators and other materials are usually manufactured by general sputtering methods, which are characterized by relatively simple equipment, not difficult to control, large plating area, and strong adhesion. AdNaNoTek's Magnetron Sputtering Deposition System has reliable vacuum pump system and software controlled Mass Flow Controllers (MFC) to ensure these required criteria. FBBear system control software can control the process gas rate, pump intake, exhaust in order to maintain sufficient amount of ions to sputter the target atoms.. http://www.perkin-elmer-sputter.comWe have been focusing on providing solutions and enhancements to Perkin-Elmer Sputtering Systems including Perkin-Elmer PE.

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Magnetron sputtering is a deposition technology defined as "cathodic sputtering of target material in magnetron discharge plasma (crossed field discharge)", and is shown in Figure 30. Magnetron. Nov 19, 2020 · Magnetron sputtering developed rapidly in the 1980s for semiconductor, hard coating, and architectural glass applications. While the general operating principles were well known, subtle issues relating to cathode material, operating parameters, and deposition processes were only empirically understood. A sequence of magnetron measurements is .... Dec 30, 2019 · Magnetron Sputtering K.U.TÜMEN – 2019/2020 14 The magnetron device has a dipole magnetic configuration to trap the electrons emitted at the cathode. In this way the excitation and ionization rates are enhanced, allowing the operation of the discharge at low pressures, below 10-2 mbar.. This is called magnetron sputtering and is now the mainstream of sputtering . Electrons that were moving freely are in a state of high density where there is a magnetic flux.The high density of electrons means that there are many “Ar+” people. When electrons collide, argon becomes “Ar+” + “e-“.For example, if you only have one. A magnetron sputtering source for. Magnetron sputtering of transparent conductive oxides (zinc oxide, indium tin oxide, tin oxide) is a promising technique which allows the deposition of films at low temperatures with good optical and electronic properties. A special advantage is the scalability to large areas. The principles underlying. 2011. 1. 1. · Magnetron sputtering of calcium phosphate coating. is a promising method for forming a biocompatible. ceramic coating. It is poss ible to. Working Principle of Magnetron Sputtering Under the action of an electric field of several hundred to several thousand electron volts, the plasma is accelerated and obtained sufficient force to bombard the cathode, causing the atoms of the solid sputtering target to be ejected in a typical line-of-sight cosine distribution.
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    General Principle of Operation The above illustration describes a generic manifestation of a magnetron sputtering source. DC, pulsed DC, AC and RF power supplies may be used, depending upon target material, if reactive sputtering is desired and other factors. A permanent magnet structure is located behind a target serving as a deposition source. erating principles and.

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    Introductory Principle. In Magnetron Sputtering Deposition (MDS) the coating/target material are placed on a magnetron cathode. The chamber is evacuated at ultrahigh vacuum (UHV) condition to reduce impurities and to ensure pure coating process. Then the chamber is back-filled with the process gas (usually Ar). M. A. Lieberman and Alan J. Lichtenberg, Principles of Plasma Discharges and Materials Processing (John Wiley & Sons, 1994). Google Scholar; 85. E. Bultinck, " Numerical simulation of a magnetron discharge utilized for the reactive sputter deposition of titanium nitride and oxide layers," Ph.D. dissertation (University of Antwerp, 2009. Magnetron sputtering of transparent conductive oxides (zinc oxide, indium tin oxide, tin oxide) is a promising technique which allows the deposition of films at low temperatures with good optical and electronic properties. A special advantage is the scalability to large areas. The principles underlying magnetron sputtering are reviewed in this paper. This technique is called RF-magnetron sputtering. In MS03, two of the sputter guns are DC-magnetrons and two are RF-magnetrons. In addition to Argon, Nitrogen and Oxygen are available in MS03 for use in reactive ion sputtering applications. In reactive sputtering a reactive gas chemically combines with the target material to form a different .... Power Impulse Magnetron Sputtering and Verification by Non-Sputtering Discharge Zhong-Zhen Wu, , Shu Xiao et al.-An ionization region model for high-power impulse magnetron sputtering discharges M A Raadu, I Axnäs, J T Gudmundsson et al.-Modeling of high power impulse magnetron sputtering discharges with graphite target. 2020. 12. 17. · Types of magnetron sputtering. There are many kinds of magnetron sputtering. Each has its own working principle and application object. However, there is one thing in common: the interaction between magnetic field. 2 Magnetron sputtering 2.1 Principle of magnetron sputtering As shown in Fig. 1, in a magnetron sputtering con- figuration, both an electric field E and a magnetic field B are used to confine the electron to be near the cath- ode surface where electrons are emitted. An electron, moving with a component of velocity perpendicular to. Magnetron magnetron sputtering. sputtering, in particular, shows how the Magnetron sputtering is a high-rate vacuum coat- application of simple physical principles ing technique for depositing metals, alloys and compounds onto a wide range of materials with has led to a successful commercial thicknesses up to about 5 p m. High power impulse magnetron sputtering (HiPIMS) is well known in modern physical vapor deposition (PVD) owing to its high peak power density, high degree of ionization, high plasma density and hence high ion flux towards the substrate that allows ones to deposit high quality thin films in comparison with conventional magnetron sputtering technology. 2. Principle of sputtering of TMN x>1 overstoichiometric nitride films The formation of TMN x nitride films is carried out by reactive sputtering in magnetron discharges generated in an ionized mixture of Ar+N 2 gases. The TMN x nitride film is created at an atomic level from TM atoms sputtered from the magnetron target and N atoms of the.

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    2018. 1. 20. · The Principle of Magnetron Sputtering. Magnetron sputtering is currently the most widely used method of sputtering coating, because it has the advantages of high deposition rate, excellent film quality, simple equipment. 4.2 Magneton Sputtering Principles 67 4.3 Planar Magnetron Sputtering 71 4.3.1 D.C. Planar Magnetron Sputtering 71 4.3.2 R.F. Magnetron Sputtering 74 4.4 Cylindrical Magnetron Sputtering 74 4.5 Unbalanced Magneton Sputtering 77 4.6 The Sputter and S-Gun Magnetrons 81 Chapter Five Design and Operation of theSputtering Chamber 83. Magnetron sputtering is a deposition technology involving a gaseous plasma which is generated and confined to a space containing the material to be deposited – the ‘target’. The surface of the target is eroded by high-energy ions. Oct 26, 2021 · Principle of magnetron sputtering coating. In the process of electron accelerating towards the substrate under the action of electric field, it collides with argon atoms and ionizes a large number of argon ions and electrons. Under the action of electric field, argon ion accelerates the bombardment of target material, sputtering a large number .... Magnetron sputtering deposition uses a closed magnetic field to trap electrons, enhancing both the efficiency of the initial ionization process and allowing a plasma to be generated at lower pressures which reduces both background gas incorporation in the growing film and energy loses in the sputtered atom through gas collisions. This technique ....

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    The magnetron is the desing of high-deposition-rare sputtering sources. The magnetron is a magnetically assisted discharge. As in the DC and RF sputtering arrangements there is a perpendicular (to the target surface) electric field. But in the Magnetron configuration a permanent magnet (or electromagnet) is added, to create lines of magnetic.Principle of DC Magnetron Sputtering Power Supply. Sputtering is a Physical Vapor Deposition vacuum process used to deposit very thin films onto a substrate for a wide variety of commercial and scientific purposes. Sputtering occurs when an ionized gas molecule is used to displace atoms of a specific material. These atoms then bond at the atomic level to a substrate and create a thin film. 2021. 1. 22. · The working principle of magnetron sputtering is that electrons collide with argon atoms in the process of flying to the substrate under the action of electric field E, resulting in AR-positive ions and new electrons. New electrons fly to the substrate, and Ar ions accelerate to the cathode target under the electric field's action and bombard the target surface with high. Power Impulse Magnetron Sputtering and Verification by Non-Sputtering Discharge Zhong-Zhen Wu, , Shu Xiao et al.-An ionization region model for high-power impulse magnetron sputtering discharges M A Raadu, I Axnäs, J T Gudmundsson et al.-Modeling of high power impulse magnetron sputtering discharges with graphite target. Jul 05, 2022 · (2) The sputtering time is too long. should be shortened appropriately. (3) The speed of sputtering film formation is too fast. The sputtering current or voltage should be appropriately reduced. 3. The color of the film is uneven. (1) The primer is sprayed unevenly. The application of the primer should be improved. (2) The film layer is too thin.. The principle of magnetron sputtering is introduced and the balanced and unbalanced magnetrons are compared and the necessity of unbalanced magnetrons is explained as well. Several recent developments in plasma magnetron sputtering, i.e., unbalanced magnetron sputtering, pulsed magnetron sputtering and ion assisted sputtering, are discussed. 2.4 Magnetron Sputtering 2.4.1 Basic principles. Energy is needed to create and sustain a plasma. In the stable state it has to compensate for particle loss due to recombination and diffusion by creating ions in a rate equal to the loss rate. This energy can be provided by heat, e.g. focused laser beams or in torches, by radia- tion, e.g. UV. Working principle Magnetron sputtering is a physical vapor deposition technique, which allows a good film adhesion to the substrate, and a high control on the thickness, uniformity and composition of the deposited material. By first creating a gaseous plasma and then accelerating the ions from this plasma into some source material (a.k.a. Both metals require high vacuum sputter coaters for effective deposition. Application data collected has shown that a high quality well designed rotary pumped magnetron sputter coater, such as the Quorum K550X, is capable of. 4.2 Magneton Sputtering Principles 67 4.3 Planar Magnetron Sputtering 71 4.3.1 D.C. Planar Magnetron Sputtering 71 4.3.2 R.F. Magnetron Sputtering 74 4.4 Cylindrical Magnetron Sputtering 74 4.5 Unbalanced Magneton Sputtering 77 4.6 The Sputter and S-Gun Magnetrons 81 Chapter Five Design and Operation of theSputtering Chamber 83. All four sputter guns in MS03 use magnetron sputtering to increase the gas ionization rate and, hence, the deposition rate. DC-sputtering is limited to conducting materials like metals and doped semiconductors. The reason is that bombardment with positive ions would quickly charge up the surface of an insulating target material and cause the. Sep 30, 2014 · Abstract. This overview article will deal with a special application of the sputtering process, namely, the “magnetron sputtering technique.” In order to understand the underlying physical processes behind magnetron sputtering, a brief recapitulation of the sputtering phenomena will be given as a primary contribution of this article.. Magnetron magnetron sputtering. sputtering, in particular, shows how the Magnetron sputtering is a high-rate vacuum coat- application of simple physical principles ing technique for depositing metals, alloys and compounds onto a wide range of materials with has led to a successful commercial thicknesses up to about 5 p m .. To develop high-quality refractory metal targets, pure W and W/Re alloys (with Re contents of 1, 5 and 10 mass%) were fabricated via mechanical mixing, press forming and vacuum sintering. Properties such as relative density, grain size and orientation, and magnetron sputtering characteristics were investigated in the W/Re alloys. With increasing Re content, both the relative density and purity.

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    Journal of Biomimetics, Biomaterials and Biomedical Engineering International Journal of Engineering Research in Africa. 2. Principle of sputtering of TMN x>1 overstoichiometric nitride films The formation of TMN x nitride films is carried out by reactive sputtering in magnetron discharges generated in an ionized mixture of Ar+N 2 gases. The TMN x nitride film is created at an atomic level from TM atoms sputtered from the magnetron target and N atoms of the. 2014. 11. 24. · Because ions are charged particles, magnetic fields can be used to control their velocity and behavior. John S. Chapin is credited with inventing the first planar magnetron sputtering source with a patent filed in 1974. While. The principle of tributary sputtering equipment is simple, and the rate is fast when sputtering metal. Radio frequency sputtering is more widely used. In addition to sputtering conductive materials, it can also sputter non-conductive. Wurtzite structure Sc1−xAlxN solid solution films grown by reactive magnetron sputter epitaxy: Structural. A magnetron sputtering source for. Magnetron sputtering of transparent conductive oxides (zinc oxide, indium tin oxide, tin oxide) is a promising technique which allows the deposition of films at low temperatures with good optical and electronic properties. A special advantage is the scalability to large areas. The principles underlying. The working principle of magnetron sputtering is that electrons collide with argon atoms in the process of flying to the substrate under the action of electric field E, resulting in AR-positive ions and new electrons. New electrons fly to the substrate, and Ar ions accelerate to the cathode target under the electric field's action and bombard. Magnetron magnetron sputtering. sputtering, in particular, shows how the Magnetron sputtering is a high-rate vacuum coat- application of simple physical principles ing technique for depositing metals, alloys and compounds onto a wide range of materials with has led to a successful commercial thicknesses up to about 5 p m.

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    2019. 12. 26. · The present work reports the application of RF-magnetron sputtering technique to realize CsPbBr 3 70 nm thick films on glass substrate by means of a one-step procedure. The obtained films show highly uniform surface morphology and homogeneous thickness as evidenced by AFM and SEM investigations. XRD measurements demonstrate the presence of. 2019. 12. 26. · The present work reports the application of RF-magnetron sputtering technique to realize CsPbBr 3 70 nm thick films on glass substrate by means of a one-step procedure. The obtained films show highly uniform surface morphology and homogeneous thickness as evidenced by AFM and SEM investigations. XRD measurements demonstrate the presence of. The Principle of Magnetron Sputtering. Magnetron sputtering is a technique that was developed in the 1970s, boasting high speed, low damage, and lower temperature sputtering. It involves the addition of a closed magnetic field over the target surface to enhance the efficiency of the plasma generation by increasing the probability of collisions .... High power impulse magnetron sputtering (HiPIMS) is well known in modern physical vapor deposition (PVD) owing to its high peak power density, high degree of ionization, high plasma density and hence high ion flux towards the substrate that allows ones to deposit high quality thin films in comparison with conventional magnetron sputtering technology. The working principle of magnetron sputtering is to use the electrons behind the negative cathode to capture the electrons on the negatively charged target material, add a magnetic field, it constraints on the charged particles will increase the plasma density and accelerate the deposition speed, so as to make the particles of sputtering. Magnetron magnetron sputtering. sputtering, in particular, shows how the Magnetron sputtering is a high-rate vacuum coat- application of simple physical principles ing technique for depositing metals, alloys and compounds onto a wide range of materials with has led to a successful commercial thicknesses up to about 5 p m.

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2021. 9. 23. · The different distribution directions of the magnetic field lines have a great influence on the film formation. The non-optical magnetron sputtering, multi-arc plating target source, ion source, plasma source, etc. that work under the EXBshift mechanism all work under the sub-principle. Sep 27, 2019 · Magnetron sputtering is the most widely used method in microelectronics for producing metal layers. 5. Reactive sputtering. Reaction gas (e.g., oxygen or nitrogen) is added to the Argon gas. As with the argon gas, ions of the reaction gas are formed, which react with the sputtered layer atoms in the vacuum chamber.. 2 Magnetron sputtering 2.1 Principle of magnetron sputtering As shown in Fig. 1, in a magnetron sputtering con- figuration, both an electric field E and a magnetic field B are used to confine the electron to be near the cath- ode surface where electrons are emitted. An electron, moving with a component of velocity perpendicular to. Sputtering chamber for a 4” diameter wafer which can be heated to 850°C with RF bias, loadlock, and six 2” magnetrons with manual in-situ tilt.Sputter-down system for 4-inch diameter substrates with RF bias, load lock, and four 2-inch magnetrons.. correct sputtering time. The parts of the sputtering system are: Four substrate holders, capable of heating the sample to ____C. 2014. 1. 2. · General Principle of Operation. The above illustration describes a generic manifestation of a magnetron sputtering source. DC, pulsed DC, AC and RF power supplies may be used, depending upon target material, if reactive sputtering is desired and other factors. A permanent magnet structure is located behind a target serving as a deposition source. Jan 02, 2014 · General Principle of Operation. The above illustration describes a generic manifestation of a magnetron sputtering source. DC, pulsed DC, AC and RF power supplies may be used, depending upon target material, if reactive sputtering is desired and other factors. A permanent magnet structure is located behind a target serving as a deposition source.. Magnetron magnetron sputtering. sputtering, in particular, shows how the Magnetron sputtering is a high-rate vacuum coat- application of simple physical principles ing technique for depositing metals, alloys and compounds onto a wide range of materials with has led to a successful commercial thicknesses up to about 5 p m. Jan 22, 2021 · Advantages of magnetron sputtering technology: 1. The deposition speed is fast, the substrate temperature rise is low, and the damage to the film is small. 2. For most materials, sputtering can be realized as long as scrape materials can be made. 3.. for the rise in importance of this technique. Closed-"eld unbalanced magnetron sputtering (CFUBMS) is an exceptionally versatile technique for the deposition of high-quality, well-adhered "lms. The development, fundamental principles and applications of the CFUBMS process are, therefore, discussed in some detail in this review. Magnetron sputtering and HiPIMS, its high-power modification, are well-established coating techniques, capable of producing coatings with unique mechanical, optical and even chemical properties. The fundamental principles have been known for decades – the plasma produces fast atoms that are sputtered and travel towards the substrates, where .... Magnetron sputtering enabled sustainable synthesis of nanomaterials for energy electrocatalysis Jie Liang , a Qian Liu , a Tingshuai Li , a Yonglan Luo , a Siyu Lu , b Xifeng Shi , c Fang Zhang , d Abdullah M. Asiri e and Xuping Sun * a. Magnetron sputtering is a deposition technology defined as "cathodic sputtering of target material in magnetron discharge plasma (crossed field discharge)", and is shown in Figure 30. Magnetron. Principle of DC Magnetron Sputtering Power Supply-BOVCEED-The DC magnetron sputtering power supply is a kind of physical vapor deposition. Metals, semiconductors, insulators and other materials are usually manufactured by general sputtering methods, which are characterized by relatively simple equipment, not difficult to control, large plating area, and strong adhesion. Introductory Principle. In Magnetron Sputtering Deposition (MDS) the coating/target material are placed on a magnetron cathode. The chamber is evacuated at ultrahigh vacuum (UHV) condition to reduce impurities and to ensure pure coating process. Then the chamber is back-filled with the process gas (usually Ar). for the rise in importance of this technique. Closed-"eld unbalanced magnetron sputtering (CFUBMS) is an exceptionally versatile technique for the deposition of high-quality, well-adhered "lms. The development, fundamental principles and applications of the CFUBMS process are, therefore, discussed in some detail in this review.. Principle Of Magnetron Sputtering - Mar 03, 2021 - An orthogonal magnetic field and electric field are added between the sputtered target (cathode) and the anode, and the required inert gas (usually Ar gas) is filled in the high vacuum chamber. The permanent magnet forms 250-350 on the surface of the target material. Magnetron magnetron sputtering. sputtering, in particular, shows how the Magnetron sputtering is a high-rate vacuum coat- application of simple physical principles ing technique for depositing metals, alloys and compounds onto a wide range of materials with has led to a successful commercial thicknesses up to about 5 p m .. 2021. 9. 21. · Magnetron sputtering is a particular type of plasma deposition that uses a magnetic field applied to the target to increase adhesion and deposition rates dramatically. The key advantage of this particular plasma deposition approach is that it does not require melting and evaporation of the source material, making it compatible with the widest range of materials. The U.S. Department of Energy's Office of Scientific and Technical Information. In recent years, magnetron sputtering has been widely utilized as a gas-phase technique for fabrication of metal/graphene hybrids. The basic components of a sputter chamber, consisting of a powder sample holder, a turbo molecular pump, and an orthogonally oriented sputter gun, are illustrated in Fig. 7.20.This "dry" processing technique is capable of not only removing the requirement of. Principle of magnetron sputtering coating. Sputter deposition is the process whereby particles of sputtering materials are sputtered out and deposited on a substrate to form a film. Since ions are charged particles, we can add magnetic fields to control their speed and behavior. And that's how its name "magnetron sputtering" comes from. The principle of magnetron sputtering is shown in Supplementary material S.M.1. The target is placed at a negative high voltage potential, and the back of the target is a permanent magnet, which produces a magnetic field that is orthogonal to the electric field. Magnetron Sputtering Process. There are a number of ways to enhance this process. One common way to do this is to use what is known as a magnetron sputtering system. The main difference between this and a basic DC sputtering system described above is the addition of a strong magnetic field near the target area. This field causes traveling. Jan 02, 2014 · General Principle of Operation. The above illustration describes a generic manifestation of a magnetron sputtering source. DC, pulsed DC, AC and RF power supplies may be used, depending upon target material, if reactive sputtering is desired and other factors. A permanent magnet structure is located behind a target serving as a deposition source.. 2018. 1. 20. · The Principle of Magnetron Sputtering. Magnetron sputtering is currently the most widely used method of sputtering coating, because it has the advantages of high deposition rate, excellent film quality, simple equipment. In this study, tantalum nitride (TaN) thin films were deposited on Si(100) and 316L stainless steel (SS) substrates by reactive DC magnetron sputtering. The effect of the nitrogen fraction ([N 2]) in the gas mixture on the composition, phase formation, roughness and corrosion resistance was investigated. The films were characterized by. Magnetron sputtering system PRINCIPLE MORE INFO - sputter deposition of thin layers by an ion bombardment of a solid substrate (negativly charged target - cathode) - using glow discharge of a process gas (Ar, O 2, N 2, etc.) in a magnetic field - universal process - large range of applications - standard (Ar) or reactive sputtering (O 2, N 2). Magnetron sputtering is a well-known technique that is commonly used for the deposition of thin compact films. However, as was shown in the 1990s, when sputtering is performed at pressures high enough to trigger volume nucleation/condensation of the supersaturated vapor generated by the magnetron, various kinds of nanoparticles may also be produced. The plasma parameters and reaction kinetics in an inverted cylindrical magnetron chamber have been studied with an energy resolved mass spectrometer during the sputtering of aluminum targets in an Ar/O{sub 2} discharge. Principle of Magnetron Sputtering System. Power is supplied to the magnetron , which produces a negative that is, in turn, applied to the sputtering target materials. This negative voltage then attracts positive ions to the target surface while simultaneously inducing a large kinetic energy. Magnetron sputtering film forming process uses DC magnetron sputtering power supply, intermediate frequency magnetron sputtering power supply, unipolar pulse magnetron sputtering power supply, sputtering materials are mainly neutral atoms/radicals, sputtering The mechanism is that the voltage range of the kinetic energy power supply is below Ikv, and the ion energy is only about a few electron .... for the rise in importance of this technique. Closed-"eld unbalanced magnetron sputtering (CFUBMS) is an exceptionally versatile technique for the deposition of high-quality, well-adhered "lms. The development, fundamental principles and applications of the CFUBMS process are, therefore, discussed in some detail in this review. Magnetron sputtering deposition is a fast technique for applying a thin layer of inorganic materials on a substrate, such as ITO or metallic contacts. The magnetron ionizes argon gas which then accelerates towards the cathode where the target materials is located. The stream of argon ions erodes away the target material making a charged cloud. M. A. Lieberman and Alan J. Lichtenberg, Principles of Plasma Discharges and Materials Processing (John Wiley & Sons, 1994). Google Scholar; 85. E. Bultinck, " Numerical simulation of a magnetron discharge utilized for the reactive sputter deposition of titanium nitride and oxide layers," Ph.D. dissertation (University of Antwerp, 2009. The major sputtering techniques are diode, planar magnetron, cylindrical magnetron, high power impulse magnetron, and ion beam sputtering. All these methods have a number of variations. Diode sputtering, shown in Figure 2, is the simplest configuration of this family. Both RF (poorly conductive targets) and DC (conductive targets) power is. 2021. 9. 23. · The different distribution directions of the magnetic field lines have a great influence on the film formation. The non-optical magnetron sputtering, multi-arc plating target source, ion source, plasma source, etc. that work under the EXBshift mechanism all work under the sub-principle. Magnetron sputtering technology. Technical illustration. Client: RUSNANO. Date: 15.09.2008. RUSNANO collaborates with Italian company Galileo Vacuum Systems s.p.a. to produce metallized packaging materials and equipment for handling the metal coating of rolled materials. The project is based on an innovative nanotechnology for selective .... Principle of Magnetron Sputtering System. Power is supplied to the magnetron, which produces a negative that is, in turn, applied to the sputtering target materials. This negative voltage then attracts positive ions to the target surface while simultaneously inducing a large kinetic energy. The principle of the amorphous oxide is basically the same as that of the crystalline state, Magnetron sputtering technology can prepare super-hard films, corrosion-resistant friction films, superconducting films, magnetic films, optical films, and various films with special functions. It is widely used in the field of industrial film preparation. Jul 05, 2022 · (2) The sputtering time is too long. should be shortened appropriately. (3) The speed of sputtering film formation is too fast. The sputtering current or voltage should be appropriately reduced. 3. The color of the film is uneven. (1) The primer is sprayed unevenly. The application of the primer should be improved. (2) The film layer is too thin.. High Power impulse magnetron sputtering (HIPIMS) is a relatively young physical vapor deposition (PVD) technology that combines magnetron sputtering with pulsed power technology, where the ... The principle is demonstrated for measurements at a distance of . 30 mm from the target, for different radial positions, at an argon pressure of 0.3 Pa. erating principles and characteristics of these devices as well as several typical applications. INTRODUCTION Hollow cathode sputtering sources, invented in the 1970s, are magnetrons which sputter material from the inside sur-faces of cylindrical targets [1,2]. Figure 1 shows a schematic representation of such a device. Because of their enclosed. http://www.perkin-elmer-sputter.comWe have been focusing on providing solutions and enhancements to Perkin-Elmer Sputtering Systems including Perkin-Elmer PE.... Magnetron Sputtering Process. There are a number of ways to enhance this process. One common way to do this is to use what is known as a magnetron sputtering system. The main difference between this and a basic DC sputtering system described above is the addition of a strong magnetic field near the target area. This field causes traveling. The main principles of the magnetron sputtering process are presented in Fig. 2, which shows the side view of a magnetron. The idea is to enhance the ionization of the atoms to hit the target so that the number of sputtered material is increased compared to conventional sputtering. The principle of magnetron sputtering is shown in Supplementary material S.M.1. The target is placed at a negative high voltage potential, and the back of the target is a permanent magnet, which produces a magnetic field that is orthogonal to the electric field. Magnetron sputtering is a deposition technology defined as "cathodic sputtering of target material in magnetron discharge plasma (crossed field discharge)", and is shown in Figure 30. Magnetron. Both metals require high vacuum sputter coaters for effective deposition. Application data collected has shown that a high quality well designed rotary pumped magnetron sputter coater, such as the Quorum K550X, is capable of producing a continuous Pt (platinum) film with a grain size in the order of 2 nm. The principle of the DC magnetron sputtering power supply is that the plasma generated by the rare gas due to abnormal glow discharge uses the electric field effect to bombard the outer surface of the cathode target, and sputter the molecules, atoms, ions and electrons on the outer surface of the target. An array of magnetron sputtering sources. The magnetron sputtering discharge configuration can be planar (as shown in figure 2), cylindrical with axial magnetic field (as shown in figure 3), or the cathode target can be a tube that rotates around a fixed magnet assembly (as shown in figure 4). However, these are just geometrical variants of the same principle, to magnetically confine. Principle of DC Magnetron Sputtering Power Supply-BOVCEED-The DC magnetron sputtering power supply is a kind of physical vapor deposition. Metals, semiconductors, insulators and other materials are usually manufactured by general sputtering methods, which are characterized by relatively simple equipment, not difficult to control, large plating area, and strong adhesion. Magnetron Sputtering Process. There are a number of ways to enhance this process. One common way to do this is to use what is known as a magnetron sputtering system. The main difference between this and a basic DC sputtering system described above is the addition of a strong magnetic field near the target area. This field causes traveling. Sputter deposition is a. Principle of DC Magnetron Sputtering Power Supply-BOVCEED-The DC magnetron sputtering power supply is a kind of physical vapor deposition. Metals, semiconductors, insulators and other materials are usually manufactured by general sputtering methods, which are characterized by relatively simple equipment, not difficult to control, large plating area, and strong adhesion. A magnetron is basically a vacuum tube of high power having multiple cavities. It is also known as cavity magnetron because of the presence of anode in the resonant cavity of the tube. The operating principle of a magnetron is such that when electrons interact with electric and magnetic field in the cavity then high power oscillations get. Working Principle of Magnetron Sputtering Under the action of an electric field of several hundred to several thousand electron volts, the plasma is accelerated and obtained sufficient force to bombard the cathode, causing the atoms of the solid sputtering target to be ejected in a typical line-of-sight cosine distribution. High power impulse magnetron sputtering (HIPIMS) is a relatively young physical vapor deposition (PVD) technology that combines magnetron sputtering with pulsed power technology ... i.e. using Faraday’s principle of inductive generation of high voltage pulses via repetitive current interruption. Therefore, all original experiments of. Magnetron sputtering system PRINCIPLE MORE INFO - sputter deposition of thin layers by an ion bombardment of a solid substrate (negativly charged target - cathode) - using glow discharge of a process gas (Ar, O 2, N 2, etc.) in a magnetic field - universal process - large range of applications - standard (Ar) or reactive sputtering (O 2, N 2). materials. Magnetron sputter targets are traditionally far more expensive than the evaporative materials used in the E-Beam process. Magnetron Sputtering Magnetron sputtering is a deposition technology involving a vapor/gas plasma which is produced and confined to the same space as the desired deposition material or the evaporative target.. AdNaNoTek's Magnetron Sputtering Deposition System has reliable vacuum pump system and software controlled Mass Flow Controllers (MFC) to ensure these required criteria. FBBear system control software can control the process gas rate, pump intake, exhaust in order to maintain sufficient amount of ions to sputter the target atoms.. This is called magnetron sputtering and is now the mainstream of sputtering . Electrons that were moving freely are in a state of high density where there is a magnetic flux.The high density of electrons means that there are many “Ar+” people. When electrons collide, argon becomes “Ar+” + “e-“.For example, if you only have one. Principle of magnetron sputtering coating. In the process of electron accelerating towards the substrate under the action of electric field, it collides with argon atoms and ionizes a large number of argon ions and electrons. Under the action of electric field, argon ion accelerates the bombardment of target material, sputtering a large number. Direct current (DC) sputtering is a thin film deposition technique that uses ionised gas molecules to vaporise (sputter) molecules off the target material into plasma. DC sputtering is the preferred technique for electrically conductive target materials because of its low cost and high level of control. The DC magnetron sputtering process. 2022. 7. 21. · Magnetron Sputtering Process. There are a number of ways to enhance this process. One common way to do this is to use what is known as a magnetron sputtering system. The main difference between this and a basic DC sputtering system described above is the addition of a strong magnetic field near the target area. High Power impulse magnetron sputtering (HIPIMS) is a relatively young physical vapor deposition (PVD) technology that combines magnetron sputtering with pulsed power technology, where the ... The principle is demonstrated for measurements at a distance of . 30 mm from the target, for different radial positions, at an argon pressure of 0.3 Pa. Sputtering is a Physical Vapor Deposition vacuum process used to deposit very thin films onto a substrate for a wide variety of commercial and scientific purposes. Sputtering occurs when an ionized gas molecule is used to displace atoms of a specific material. These atoms then bond at the atomic level to a substrate and create a thin film. Magnetron sputtering deposition is a fast technique for applying a thin layer of inorganic materials on a substrate, such as ITO or metallic contacts. The magnetron ionizes argon gas which then accelerates towards the cathode where the target materials is located. The stream of argon ions erodes away the target material making a charged cloud. Jul 05, 2022 · The magnetron sputtering coating technology of pvd coating machine has been widely used in all walks of life and is favored by many coating manufacturers, but most of them have a very shallow understanding of the coating principle of magnetron sputtering pvd coating machine. Sort out some introductions about the coating principles of magnetron .... Magnetron sputtering fundamentals. The concept of sputtering was first described by Grove (1852) and Plücker (1858), who reported vaporization and film formation of metal films by "spluttering" or "cathode disintegration". Thomas Edison in 1902 provided the first commercial application of sputtering > of gold onto hard wax recording media. 2017. 3. 8. · The properties of the RF‐magnetron sputter‐deposited films are highly influenced by the bombardment of the growing film with species from the sputtering target and from the plasma. The latter is determined by the. Center for Advanced Plasma Surface Technology Magnetron Sputtering Technology. http://www.capst.re.kr 13 / 89. Sputtering process for thin film deposition. Center for Advanced Plasma Surface Technology Magnetron Sputtering Technology. http://www.capst.re.kr 13 / 89. Sputtering process for thin film deposition. A rotary cylindrical sputtering system incorporates separate, separately-controlled linear magnetron sputter cathode and reaction zones for sputter depositing materials such as refractory metals and forming oxides and other compounds and alloys of such materials. The associated process involves rotating or translating workpieces past the differentially pumped,. DC Magnetron Sputtering Principles Sputtering is a physical vapor deposition process used to deposit a film of atoms onto a substrate. ... Let the roughing pump work on the foreline pressure to reduce it. 3. Close the foreline and THEN quickly open the roughing line. 4. Let the roughing pump work on the roughing line to reduce the pressure there. 2017. 3. 8. · The properties of the RF‐magnetron sputter‐deposited films are highly influenced by the bombardment of the growing film with species from the sputtering target and from the plasma. The latter is determined by the. materials. Magnetron sputter targets are traditionally far more expensive than the evaporative materials used in the E-Beam process. Magnetron Sputtering Magnetron sputtering is a deposition technology involving a vapor/gas plasma which is produced and confined to the same space as the desired deposition material or the evaporative target. Sep 27, 2019 · Magnetron sputtering is the most widely used method in microelectronics for producing metal layers. 5. Reactive sputtering. Reaction gas (e.g., oxygen or nitrogen) is added to the Argon gas. As with the argon gas, ions of the reaction gas are formed, which react with the sputtered layer atoms in the vacuum chamber.. The principle of magnetron sputtering is introduced and the balanced and unbalanced magnetrons are compared and the necessity of unbalanced magnetrons is explained as well. Several recent developments in plasma magnetron sputtering, i.e., unbalanced magnetron sputtering, pulsed magnetron sputtering and ion assisted sputtering, are discussed. Magnetron sputtering and HiPIMS, its high-power modification, are well-established coating techniques, capable of producing coatings with unique mechanical, optical and even chemical properties.The fundamental principles have been known for decades - the plasma produces fast atoms that are sputtered and travel towards the substrates, where they are deposited, optionally reacting with a. In this study, tantalum nitride (TaN) thin films were deposited on Si(100) and 316L stainless steel (SS) substrates by reactive DC magnetron sputtering. The effect of the nitrogen fraction ([N 2]) in the gas mixture on the composition, phase formation, roughness and corrosion resistance was investigated. The films were characterized by. Dec 30, 2019 · Magnetron Sputtering K.U.TÜMEN – 2019/2020 14 The magnetron device has a dipole magnetic configuration to trap the electrons emitted at the cathode. In this way the excitation and ionization rates are enhanced, allowing the operation of the discharge at low pressures, below 10-2 mbar.. Dec 17, 2020 · Types of magnetron sputtering. There are many kinds of magnetron sputtering. Each has its own working principle and application object. However, there is one thing in common: the interaction between magnetic field and electric field makes electrons spiral around the target surface, thus increasing the probability of electrons impacting argon to produce ions.. Principle of Magnetron Sputtering System. Power is supplied to the magnetron, which produces a negative that is, in turn, applied to the sputtering target materials. This negative voltage then attracts positive ions to the target surface while simultaneously inducing a large kinetic energy. Principle of Magnetron Sputtering System Power is supplied to the magnetron, which produces a negative that is, in turn, applied to the sputtering target materials. This negative voltage then attracts positive ions to the target surface while simultaneously inducing a large kinetic energy. The main principles of the magnetron sputtering process are presented in Fig. 2, which shows the side view of a magnetron. The idea is to enhance the ionization of the atoms to hit the target so that the number of sputtered material is increased compared to conventional sputtering. 2. Principle of sputtering of TMN x>1 overstoichiometric nitride films The formation of TMN x nitride films is carried out by reactive sputtering in magnetron discharges generated in an ionized mixture of Ar+N 2 gases. The TMN x nitride film is created at an atomic level from TM atoms sputtered from the magnetron target and N atoms of the. This technique is called RF-magnetron sputtering. In MS03, two of the sputter guns are DC-magnetrons and two are RF-magnetrons. In addition to Argon, Nitrogen and Oxygen are available in MS03 for use in reactive ion sputtering applications. In reactive sputtering a reactive gas chemically combines with the target material to form a different .... 2014. 1. 2. · General Principle of Operation. The above illustration describes a generic manifestation of a magnetron sputtering source. DC, pulsed DC, AC and RF power supplies may be used, depending upon target material, if reactive sputtering is desired and other factors. A permanent magnet structure is located behind a target serving as a deposition source. Working principle Magnetron sputtering is a physical vapor deposition technique, which allows a good film adhesion to the substrate, and a high control on the thickness, uniformity and composition of the deposited material. By first creating a gaseous plasma and then accelerating the ions from this plasma into some source material (a.k.a. Both metals require high vacuum sputter coaters for effective deposition. Application data collected has shown that a high quality well designed rotary pumped magnetron sputter coater, such as the Quorum K550X, is capable of producing a continuous Pt (platinum) film with a grain size in the order of 2 nm. Jan 22, 2021 · Advantages of magnetron sputtering technology: 1. The deposition speed is fast, the substrate temperature rise is low, and the damage to the film is small. 2. For most materials, sputtering can be realized as long as scrape materials can be made. 3.. This technique is called RF-magnetron sputtering. In MS03, two of the sputter guns are DC-magnetrons and two are RF-magnetrons. In addition to Argon, Nitrogen and Oxygen are available in MS03 for use in reactive ion sputtering applications. In reactive sputtering a reactive gas chemically combines with the target material to form a different .... . 2010. 2. 15. · • The key principle is energy and momentum conservation. • In any collision, momentum is conserved. • If the collision is elastic, kinetic energy is also conserved. • The energies required for sputtering are much higher than lattice bonding or vibrational energies (which are the causes of inelastic interactions), therefore sputtering. 2020. 12. 17. · Types of magnetron sputtering. There are many kinds of magnetron sputtering. Each has its own working principle and application object. However, there is one thing in common: the interaction between magnetic field. General Principle of Operation The above illustration describes a generic manifestation of a magnetron sputtering source. DC, pulsed DC, AC and RF power supplies may be used, depending upon target material, if reactive sputtering is desired and other factors. A permanent magnet structure is located behind a target serving as a deposition source. RF magnetron sputtering. RF magnetron sputtering is a technique where Argon ions are accelerated by a RF electric field to hit a target made of the material to sputter. The target is sputtered in all directions, in particular, sputtered atoms will reach the substrate placed in front of the target, but outside of the plasma, to prevent etching. The present work reports the application of RF-magnetron sputtering technique to realize CsPbBr 3 70 nm thick films on glass substrate by means of a one-step procedure. The obtained films show highly uniform surface morphology and homogeneous thickness as evidenced by AFM and SEM investigations. XRD measurements demonstrate the presence of two phases: a dominant orthorhombic CsPbBr 3 and a. Magnetron sputtering principle: an orthogonal magnetic field and an electric field are applied between the sputtered target (cathode) and the anode, and the required inert gas (usually Ar gas) is charged in the high vacuum chamber, and the permanent magnet is at the target. The surface of the material forms a magnetic field of 250 to 350 Gauss. The principle of the DC magnetron sputtering power supply is that the plasma generated by the rare gas due to abnormal glow discharge uses the electric field effect to bombard the outer surface of the cathode target, and sputter the molecules, atoms, ions and electrons on the outer surface of the target. An array of magnetron sputtering sources. materials. Magnetron sputter targets are traditionally far more expensive than the evaporative materials used in the E-Beam process. Magnetron Sputtering Magnetron sputtering is a deposition technology involving a vapor/gas plasma which is produced and confined to the same space as the desired deposition material or the evaporative target. Introductory Principle. In Magnetron Sputtering Deposition (MDS) the coating/target material are placed on a magnetron cathode. The chamber is evacuated at ultrahigh vacuum (UHV) condition to reduce impurities and to ensure pure coating process. Then the chamber is back-filled with the process gas (usually Ar). The magnetron uses the principle of applying a specially shaped magnetic field to a diode sputtering target. The principle is that the cathode surface is immersed in a magnetic field such that electron traps are created so that E x B drift currents close in on themselves. The principle was discovered as far back. In this work a new method to produce patterned and free standing pure-iron foils by magnetron sputtering in combination with UV-lithography is presented. The method is most commonly used in the thin film technology. The fabrication of bulk, free standing NiTi thin films via sputtering was demonstrated by Zamponi et al. [ 23, 24 ]. The magnetron is the desing of high-deposition-rare sputtering sources. The magnetron is a magnetically assisted discharge. As in the DC and RF sputtering arrangements there is a perpendicular (to the target surface) electric field. But in the Magnetron configuration a permanent magnet (or electromagnet) is added, to create lines of magnetic.Principle of DC Magnetron Sputtering Power Supply.

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The principle of tributary sputtering equipment is simple, and the rate is fast when sputtering metal. Radio frequency sputtering is more widely used. In addition to sputtering conductive materials, it can also sputter non-conductive. Wurtzite structure Sc1−xAlxN solid solution films grown by reactive magnetron sputter epitaxy: Structural. This is called magnetron sputtering and is now the mainstream of sputtering . Electrons that were moving freely are in a state of high density where there is a magnetic flux.The high density of electrons means that there are many “Ar+” people. When electrons collide, argon becomes “Ar+” + “e-“.For example, if you only have one.

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